Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium
- Author(s)
- Garrett Cole, Yu Bai, Markus Aspelmeyer, Eugene A. Fitzgerald
- Abstract
We outline a facile fabrication technique for the realization of free-standing AlxGa1-xAs heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF2) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of similar to 10(6).
- Organisation(s)
- Quantum Optics, Quantum Nanophysics and Quantum Information
- External organisation(s)
- Massachusetts Institute of Technology
- Journal
- Applied Physics Letters
- Volume
- 96
- No. of pages
- 4
- ISSN
- 0003-6951
- DOI
- https://doi.org/10.1063/1.3455104
- Publication date
- 2010
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 103026 Quantum optics
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/cc45e557-0a52-48ee-923a-9b9039b905db